发明名称 NOVEL PHOTORESIST POLYMER AND PHOTORESIST COMPOSITION THEREOF
摘要 PURPOSE: Novel photoresist polymer and a photoresist composition are provided to supply excellent resistance against etching, reproducibility, durability, adhesive property, and resolution. CONSTITUTION: By reducing a polymer including more than one compound of chemical formula 2a or 2c, a compound of chemical formula 3a or 3c is obtained. Herein, the compound of chemical formula 3a or 3c is reacted with more than one compound supplying an acid liable protecting group. Then, the acid liable protecting group is substituted for portion of hydroxy group to obtain compound polymer of the compound of chemical formula 1a or 1c. In a reaction formula 1, R1, R2, and R3 are alkyl having carbons for one to four. R4, R5, and R6 are hydrogen or the acid liable protecting group partially substituted to the hydroxy group.
申请公布号 KR20010016971(A) 申请公布日期 2001.03.05
申请号 KR19990032241 申请日期 1999.08.06
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BAEK, GI HO;JUNG, JAE CHANG;LEE, GEUN SU
分类号 G03F7/039 主分类号 G03F7/039
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