| 摘要 |
PURPOSE: A dry etching method for a thin layer containing strontium, bismuth and tantalum and mostly used for a ferroelectric capacitor is provided to enable a minute, exact and clean etching. CONSTITUTION: After an electrode layer(12) such as a platinum layer is formed on a substrate(11), the thin layer(13) is formed thereon and a photoresist pattern(14) is then formed on the thin layer(13). Thereafter, a resultant etching object(10) is loaded in an etching chamber. Subsequently, while an internal pressure of the etching chamber is maintained within preset ranges, a mixed etchant gas containing a chlorine, a carbon fluoride and an argon gases is supplied into the etching chamber and turned into a plasma state. The thin layer(13) is then etched into a desired pattern. Preferably, the chlorine gas is mixed in the etchant gas more than one part by volume per one part of the carbon fluoride gas. In addition, the chlorine and carbon fluoride gases may cover together a volume ratio of 30 to 40 percent in the etchant gas.
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