POWER INTEGRATED CIRCUIT STRUCTURE WHICH IS EASILY MANUFACTURED AND WHOSE CHARACTERISTIC IS EASILY CONTROLLED

摘要

PURPOSE: A power integrated circuit structure which is easily manufactured and whose characteristic is easily controlled is provided to simplify a manufacturing process, by mixing a lateral double-diffused metal oxide semiconductor(LDMOS) transistor of a non reduced-surface(RESURF) type and an LDMOS transistor of a non-RESURF type. CONSTITUTION: A power integrated circuit includes a lateral double-diffused metal oxide semiconductor(LDMOS) transistor of the first conductivity type, an LDMOS transistor of the second conductivity type and a complementary metal oxide semiconductor(CMOS) transistor which are supplied on an active silicon layer of a silicon-on-insulator(SOI) substrate. The LDMOS transistor of the first conductivity type is formed in the deep second conductive well of the active silicon layer as a reduced-surface (RESURF) field type. The LDMOS transistor of the second conductivity type is formed in the deep second conductive well of the active silicon layer as a non-RESURF field type.