| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be stabilized characteristics of a silicon sensor by preventing from etching abnormality of MEMS(Micro Electrical Mechanical System). CONSTITUTION: A nitride layer is vaporized on a backside of a silicon substrate using an LPCVD(Low Pressure Chemical Vapor Deposition) method. General integrated circuit processing steps such as forming a buried layer, an isolation layer, a base area, an emitter area, a contact hole, and a metal layer, are applied on the substrate. An oxide layer is doped on the nitride layer to protect the nitride layer from etching. After evaporating a metal layer, a metal wire line pattern is built by photolithography method. A passivation layer covers the whole substrate including the metal wire line. To expose some part of the metal wire line, pad aperture is made selectively on the passivation layer. A metal pad is formed and connected electrically with the metal wire line through the aperture. Using the oxide layer as a mask, the nitride layer is etched until the substrate is exposed. An etching groove is made on the backside of the substrate by MEMS(Micro Electrical Mechanical System) etching.
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