发明名称 |
METHOD FOR IMPROVING PLANARIZATION OF WAFER IN MANUFACTURING WAFER |
摘要 |
PURPOSE: A method for improving planarization of a wafer in manufacturing the wafer is provided to simultaneously improve planarization and roughness of the wafer, by firstly etching a lapped wafer with an alkaline etching solution, and by secondly etching the wafer etched by the alkaline etching solution with an acid etching solution. CONSTITUTION: A surface of a wafer manufactured by slicing an ingot is lapped by a predetermined thickness. The lapped wafer is etched by an alkaline etching solution to improve planarization of the lapped wafer. An etching process using an acid etching solution is performed to improve roughness of the wafer etched by the alkaline etching solution. The wafer etched by the acid etching solution is polished.
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申请公布号 |
KR20010016655(A) |
申请公布日期 |
2001.03.05 |
申请号 |
KR19990031664 |
申请日期 |
1999.08.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, SEONG HUN;CHOI, SU YEOL;HONG, JONG HYEOK;LEE, GON SEOP |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
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地址 |
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