| 摘要 |
PURPOSE: A method for manufacturing a double cylindrical capacitor of a highly integrated semiconductor device is provided to maximize an effective area of the capacitor, by easily forming the double cylindrical capacitor by a simple method using a spacer. CONSTITUTION: The first insulating layer having at least one contact hole is formed on a semiconductor substrate(20) including a transistor. A plug is formed on the first insulating layer to fill the contact hole. After a nitride layer and the second insulating layer are sequentially applied on the resultant structure, the second insulating layer and the nitride layer are etched to expose the plug. Polysilicon for the first storage electrode is formed on the resultant structure. A spacer is formed on both sidewalls of the polysilicon for the first storage electrode. Polysilicon for the second storage electrode is formed on the resultant structure. The third insulating layer is filled in the cylinder, and the storage node is separated. The third insulating layer, the spacer and the second insulating layer inside and outside the cylinder are eliminated to form a cylindrical double storage electrode. A dielectric layer and a plate electrode are formed on the entire surface of the double storage electrode.
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