发明名称 METHOD FOR MANUFACTURING SHALLOW TRENCH ISOLATION STRUCTURE
摘要 PURPOSE: A method for manufacturing a shallow trench isolation structure is provided to relax a corner effect by forming a liner oxide layer using an ozone gas. CONSTITUTION: A substrate(100) is provided. A pad oxide layer is formed on the substrate(100). A hard mask is formed on the substrate(100). A trench is formed within the substrate(100) by etching the hard mask, the pad oxide layer, and the substrate(100). A ultraviolet ray is irradiated to the substrate(100) under ozone atmosphere. A liner oxide layer(108) is formed on a surface of the trench by irradiating the ultraviolet ray. The trench is filled with an insulating plug(110a).
申请公布号 KR20010017465(A) 申请公布日期 2001.03.05
申请号 KR19990032982 申请日期 1999.08.11
申请人 MOSEL VITELIC INC.;PROMOS TECHNOLOGIES INC.;SIEMENS AKTIENGESELLSCHAFT 发明人 MAOPEN-RIANG
分类号 H01L21/76;(IPC1-7):H01L21/76 主分类号 H01L21/76
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