发明名称 |
METHOD FOR MANUFACTURING SHALLOW TRENCH ISOLATION STRUCTURE |
摘要 |
PURPOSE: A method for manufacturing a shallow trench isolation structure is provided to relax a corner effect by forming a liner oxide layer using an ozone gas. CONSTITUTION: A substrate(100) is provided. A pad oxide layer is formed on the substrate(100). A hard mask is formed on the substrate(100). A trench is formed within the substrate(100) by etching the hard mask, the pad oxide layer, and the substrate(100). A ultraviolet ray is irradiated to the substrate(100) under ozone atmosphere. A liner oxide layer(108) is formed on a surface of the trench by irradiating the ultraviolet ray. The trench is filled with an insulating plug(110a).
|
申请公布号 |
KR20010017465(A) |
申请公布日期 |
2001.03.05 |
申请号 |
KR19990032982 |
申请日期 |
1999.08.11 |
申请人 |
MOSEL VITELIC INC.;PROMOS TECHNOLOGIES INC.;SIEMENS AKTIENGESELLSCHAFT |
发明人 |
MAOPEN-RIANG |
分类号 |
H01L21/76;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|