METHOD FOR MANUFACTURING POLYSILICON THIN FILM TRANSISTOR

摘要

PURPOSE: A method for manufacturing a polysilicon thin film transistor(TFT) is provided to guarantee a carrier mobility and to increase resolution of a liquid crystal display, by decreasing a surface contact resistance with a contact. CONSTITUTION: An active pattern composed of a polysilicon layer is formed on a substrate. A gate insulating layer is formed on the active pattern. A gate pattern is formed on the gate insulating layer. An interlayer dielectric is formed on the gate pattern. The first contact hole is formed to expose the gate pattern while the second contact hole is formed to expose a source/drain region of the active pattern. A resistive material on a surface exposed by the contact hole is cleaned. A metal layer for a contact and an interconnection is stacked and patterned. An annealing process is performed regarding the substrate.