| 摘要 |
PURPOSE: A surface treatment method for a semiconductor substrate such as a nitride layer is provided to remove an undesirable footing phenomenon of a resist pattern causing a poor etch profile. CONSTITUTION: In a photolithographic process, the substrate is surface-treated by using boron compound. The substrate is selected from the group consisting of a silicon nitride substrate, a titanium nitride substrate, and a silicon oxynitride substrate. The boron compound used is in a gaseous state or a liquid state. In case of using the gaseous boron compound, an oven is preferably in a temperature of 60 to 300 deg.C. Alternatively, in case of using the liquid boron compound, a bath is preferably in a temperature of 20 to 200 deg.C. During the surface treatment, the boron compound reacts with an NH2 radical of the substrate and thereby prevents the footing phenomenon caused by the NH2 radical.
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