SEMICONDUCTOR MEMORY DEVICE REDUCING SENSING NOISE AND SENSING CURRENT

摘要

PURPOSE: A semiconductor memory device reducing sensing noise and sensing current is provided to prevent an unnecessary sensing operation generated in a memory cell group that is not selected. CONSTITUTION: A semiconductor memory device has memory cell arrays which memory cells are arranged in direction of rows and columns. A plurality of memory cell groups(40a,40b) which memory cell arrays are divided in direction of columns by segment have a sub-word line(42a,42b) selected by group selection signal respectively. A plurality of sub-word line driver(46a,46b) derive the sub-word line of memory cell group activated in response to the group selection signal. A signal generator generates a signal that controls operation of a bit line sense amplifier(48a,48b,48c,48d). Therefore it is possible to prevent an unnecessary sensing operation generated in a memory cell group that is not selected.