发明名称 ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR
摘要 PURPOSE: An atmospheric pressure chemical vapor deposition(APCVD) equipment for manufacturing a semiconductor is provided to control local non-uniformity of a thickness in a periphery of a wafer, by depositing a layer while the wafer fixed in a revolving plate revolves. CONSTITUTION: A layer is deposited while a wafer(4) is transferred from an entrance of a reaction chamber to an exit by a belt installed in a lower portion of the reaction chamber. A revolving axis(12) is fixed in the belt at regular intervals, and a revolving plate(13) in which the wafer can settle is installed in an upper end of the revolving axis, so that the wafer is settled for transfer.
申请公布号 KR20010017036(A) 申请公布日期 2001.03.05
申请号 KR19990032331 申请日期 1999.08.06
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 HONG, GEUN BONG
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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