发明名称 |
ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR |
摘要 |
PURPOSE: An atmospheric pressure chemical vapor deposition(APCVD) equipment for manufacturing a semiconductor is provided to control local non-uniformity of a thickness in a periphery of a wafer, by depositing a layer while the wafer fixed in a revolving plate revolves. CONSTITUTION: A layer is deposited while a wafer(4) is transferred from an entrance of a reaction chamber to an exit by a belt installed in a lower portion of the reaction chamber. A revolving axis(12) is fixed in the belt at regular intervals, and a revolving plate(13) in which the wafer can settle is installed in an upper end of the revolving axis, so that the wafer is settled for transfer.
|
申请公布号 |
KR20010017036(A) |
申请公布日期 |
2001.03.05 |
申请号 |
KR19990032331 |
申请日期 |
1999.08.06 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
HONG, GEUN BONG |
分类号 |
H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|