Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

摘要

A method for making a semiconductor device having a pattern of highly doped regions located some distance apart in a semiconductor substrate and regions of low doping located between the highly doped regions. A diffusion barrier material is applied to the semiconductor substrate at the location of the regions of low doping by imprinting with the barrier material in the pattern of the regions of low doping. The doping material is applied after or before imprinting with barrier material so that the highly doped regions are formed essentially between the barrier material in the substrate.