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发明名称
평판인쇄법을반도체디바이스를제조하는방법
摘要
본 발명은 반도체 디바이스의 제조에 있어서 심자외선 평판 인쇄에 적합한 내식막의 특성을 현저히 향상시키는 삼원 공중합체의 용도에 관한 것이다. 당해 삼원 공중합체는 이산화황, 감산성 단량체, 및 최종 삼원 공중합체에 극성을 부여하는 단량체로부터 형성되는 중합체이다.
申请公布号
KR100272115(B1)
申请公布日期
2001.03.02
申请号
KR19920023276
申请日期
1992.12.04
申请人
null, null
发明人
자넷미호코코메타니
分类号
C08G75/22;G03F7/004;G03F7/038;G03F7/039;H01L21/027;H01L21/30;H05K3/00
主分类号
C08G75/22
代理机构
代理人
主权项
地址
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