发明名称 Vorrichtung zum Detektieren des Oberflächenzustandes eines Wafers
摘要 An apparatus for detecting a surface condition of a wafer can be incorporated in a wafer production system. The apparatus has a laser beam source for emitting a laser beam having a wavelength for transmission through the wafer. The laser beam source is positioned to apply the laser beam to the wafer from a reverse side thereof such that the laser beam undergoes total reflection from a surface of the wafer for thereby producing near-field leakage light on the surface of the wafer. Scattered light generated by the near-field leakage light is observed to detect a surface condition of the wafer. A method of detecting a surface condition of a wafer is also disclosed.
申请公布号 DE19804370(C2) 申请公布日期 2001.03.01
申请号 DE1998104370 申请日期 1998.02.04
申请人 ADVANTEST CORP., TOKIO/TOKYO 发明人 WATANABE, MASAO
分类号 G01B11/30;G01N21/47;G01N21/88;G01N21/94;G01N21/95;G01N21/956;H01L21/66 主分类号 G01B11/30
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