发明名称 |
Vorrichtung zum Detektieren des Oberflächenzustandes eines Wafers |
摘要 |
An apparatus for detecting a surface condition of a wafer can be incorporated in a wafer production system. The apparatus has a laser beam source for emitting a laser beam having a wavelength for transmission through the wafer. The laser beam source is positioned to apply the laser beam to the wafer from a reverse side thereof such that the laser beam undergoes total reflection from a surface of the wafer for thereby producing near-field leakage light on the surface of the wafer. Scattered light generated by the near-field leakage light is observed to detect a surface condition of the wafer. A method of detecting a surface condition of a wafer is also disclosed. |
申请公布号 |
DE19804370(C2) |
申请公布日期 |
2001.03.01 |
申请号 |
DE1998104370 |
申请日期 |
1998.02.04 |
申请人 |
ADVANTEST CORP., TOKIO/TOKYO |
发明人 |
WATANABE, MASAO |
分类号 |
G01B11/30;G01N21/47;G01N21/88;G01N21/94;G01N21/95;G01N21/956;H01L21/66 |
主分类号 |
G01B11/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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