METHOD FOR MANUFACTURING GATE ELECTRODE FOR PREVENTING CHARGING DAMAGE

摘要

PURPOSE: A method for manufacturing a gate electrode is provided to prevent charging damage, by forming an oxygen ion implantation portion by implanting ions into a portion adjacent to a portion where a gate electrode is to be formed, and by charged particles are migrated to a dummy pattern formed on an isolating layer while the gate electrode is formed by a masking etch process. CONSTITUTION: A trench is formed on a semiconductor substrate(10) and an isolating layer is formed. A gate oxide layer(20) and a polysilicon layer(30) are sequentially stacked on the resultant structure. After the first photoresist layer having a contact portion is stacked in a portion where the isolating layer is to be formed, ions are implanted into the contact portion to form an ion implantation portion in the polysilicon layer. The first photoresist layer is eliminated, and the second photoresist layer is stacked in a portion where a gate electrode(B) is to be formed. The gate electrode is formed by a masking etch process while a dummy pattern(A) is formed on the isolating layer so that the etching is prevented by an oxygen ion implantation portion(35) to accumulate charged particles.