| 摘要 |
PURPOSE: A method for manufacturing a metal-oxide-semiconductor(MOS) transistor for preventing a hot carrier is provided to improve yield while minimizing a hot carrier effect even when a channel region becomes narrow, by having a concentration phenomenon of an electric field located in a substrate separated from an edge of a gate oxide layer by a barrier impurity implantation region. CONSTITUTION: A gate oxide layer(104) and a gate electrode(106) are sequentially formed on a substrate(100) having an isolating layer(102). Low density impurity ions of a conductivity type different from that of the substrate are implanted using the gate electrode as a mask to form a lightly doped drain(LDD) region(108) in the substrate exposed between the gate electrode and the isolating layer. After a mask pattern selectively opening a drain portion out of an edge of the gate electrode is formed, impurity ions of a conductivity type different from that of the LDD region are implanted to form a barrier impurity implantation region(112). The mask pattern is eliminated, and an insulating spacer is formed on a side of the gate electrode. High density impurity ions of a conductivity type different from that of the substrate are implanted to form a source/drain region(118) in the substrate exposed between the spacer edge and the isolating layer by using the gate electrode and the spacer as a mask.
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