SILYLATION METHOD FOR REDUCING CRITICAL DIMENSION LOSS AND RESIST LOSS

摘要

A method for reducing critical dimension loss and resist loss dimensions during etching includes providing a dielectric layer (12) having an anti-reflection layer (14) formed thereon and patterning a resist layer (16) on the anti-reflection layer. The resist layer is exposed to an agent including silicon, and the agent is reacted with the resist to form a silylation region (18) on exposed surfaces of the resist layer. The anti-reflection layer is etched by employing the silylation regions as an etch mask wherein the silylation regions have a greater resistance to etching than the antireflection layer and the resist layer.