发明名称 ALUMINUM ALLOY THIN FILM AND TARGET MATERIAL AND METHOD FOR FORMING THIN FILM USING THE SAME
摘要 An aluminum alloy thin film, characterized in that it comprises aluminum, carbon and magnesium as alloy components, and the contents of carbon and magnesium are those in atomic % fallen within the area surrounded by the formulae: X = 0.61, X = 8, Y = 2, and Y = -0.13X + 1.3, wherein Y represents an atomic percentage of carbon and X represents an atomic percentage of magnesium, the balance being the contents of aluminum and inevitable impurities; and a sputtering target material, characterized in that it comprises aluminum, carbon, magnesium and inevitable impurities as its components, and the contents of carbon and magnesium are those in atomic % fallen within the area surrounded by the above formulae, the balance being the contents of aluminum and inevitable impurities. The aluminum alloy thin film is heat-resistant and shows low resistance, that is, is free from the occurrence of hillock even after the heat treatment at 300 to 400 DEG C and has a resistivity of 7 mu OMEGA cm or less, and the sputtering target can be used for forming such a thin film.
申请公布号 WO0114607(A1) 申请公布日期 2001.03.01
申请号 WO2000JP05361 申请日期 2000.08.10
申请人 MITSUI MINING & SMELTING CO., LTD.;KUBOTA, TAKASHI;WATANABE, HIROSHI 发明人 KUBOTA, TAKASHI;WATANABE, HIROSHI
分类号 C22C21/06;C23C14/14;C23C14/34;(IPC1-7):C22C21/06;G09F9/30;H01L21/203;H05K1/09;H05K3/14 主分类号 C22C21/06
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