发明名称 Luminescent diode with high luminosity comprises a rear electrode, a semiconductor substrate, a lower sleeve layer, an active layer, an upper sleeve layer, a window layer, a contact
摘要 Luminescent diode with high luminosity comprises a rear electrode (10); a semiconductor substrate (12) formed on the rear electrode; a lower sleeve layer (140) of first conductivity on the substrate; an active layer (142) on the lower sleeve layer; an upper sleeve layer (144) of second conductivity on the active layer; a window layer (16) of second conductivity on the upper sleeve layer; a contact layer (17) on the first part of the window layer; a conductive transparent layer (19); and a front electrode (20) on the transparent layer.
申请公布号 DE19937624(A1) 申请公布日期 2001.03.01
申请号 DE19991037624 申请日期 1999.08.10
申请人 EPISTAR CORP., HSINCHU 发明人 HSIEH, MIN-HSUN;JOU, MING-JIUNN;LEE, BIING-JYE
分类号 H01L33/02;H01L33/14;(IPC1-7):H01L33/00 主分类号 H01L33/02
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