METHOD FOR TREATING SUBSTRATES FOR MICROELECTRONICS AND SUBSTRATES OBTAINED BY SAID METHOD

摘要

The invention relates to a method for treating substrates (1) for microelectronics or opto-electronics, comprising a useful layer (6) which is at least partially composed of an oxidable material on at least one of the surfaces thereof. The inventive method consists of a first sacrificial oxidation phase whereby a certain thickness of the material making up the useful layer (6) can be removed from the surface of each substrate (1); a phase (200) in which the surface which underwent the first stage of sacrificial oxidation is polished; and a third sacrificial oxidation phase whereby material making up the useful layer (6) is removed once more from the polished surface (17).