| 摘要 |
<p>A plasma processing apparatus and a method of plasma processing using a high-density plasma and adaptable to further microminiaturization are provided, which are capable of reducing the nonuniformness of the electric field distribution on the surface of an electrode and uniforming the plasma density. A first and a second electrode (21, 5), are opposed to each other in a chamber. A feeding plate (52) is arranged very close to the surface, opposite to the surface facing to the second electrode (5), of the first electrode (21) which is a feeding surface. A feeding rod (51) is connected to the feeding plate (52) in a position radially deviating from the center of the feeding surface of the first electrode (21). The feeding plate (52) is rotated to rotate the feeding position of the feeding rod (51) over the feeding plane of the first electrode (21). By feeding in such a way, a high frequency field is produced between the first and the second electrodes (21, 5) to perform a plasma processing of a wafer W.</p> |
