SELECTIVE OXIDE ETCH FOR FORMING A PROTECTION LAYER WITH DIFFERENT OXIDE THICKNESSES

摘要

A method for forming dielectric protection in different regions of a semiconductor device (100), in accordance with the present invention, includes forming structures (112) in a first region (101) and a second region (103). A dielectric layer (114 and 115) is grown on surfaces of the structures and in between the structures in the first region and the second region. The dielectric layer is damaged in the second region to provide an altered layer (114' and 115') which is etchable at a faster rate than the dielectric layer in the first region. The dielectric layer in the first region and the altered layer in the second region are etched to provide a dielectric protection layer (122 and 120) having a first thickness in the first region and a second thickness in the second region.