发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
摘要 A semiconductor device comprises a semiconductor chip including a first surface on which a first electrode and a second electrode are formed and a second surface opposed to the first surface and on which a third electrode is formed; a first lead having a first part located on the first electrode and a second part located outside the semiconductor chip; a second lead having a first part located on the second electrode and a second part located outside the semiconductor chip; a plurality of projecting electrodes located between the first part of the first lead and the first electrode and between the first part of the second lead and the second electrode to connect corresponding electrodes and parts of the leads electrically; and an insulating sheet formed between the first part of the first lead and the first surface of the semiconductor chip and between the first part of the second lead and the first surface of the semiconductor chip to cover the whole first surface of the semiconductor chip except the areas where the projecting electrodes are arranged.
申请公布号 WO0115216(A1) 申请公布日期 2001.03.01
申请号 WO2000JP04318 申请日期 2000.06.29
申请人 HITACHI, LTD.;HIRASHIMA, TOSHINORI;TAKAHASHI, YASUSHI;KAJIWARA, RYOICHI;KOIZUMI, MASAHIRO;KISHIMOTO, MUNEHISA 发明人 HIRASHIMA, TOSHINORI;TAKAHASHI, YASUSHI;KAJIWARA, RYOICHI;KOIZUMI, MASAHIRO;KISHIMOTO, MUNEHISA
分类号 H01L21/60;H01L21/48;H01L21/56;H01L23/48;H01L23/482;H01L23/485;H01L23/495 主分类号 H01L21/60
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