Defective relief analysis procedure of memory, involves detecting line or row address of defective cell in searched memory area, and specifying and storing address of defective cell

摘要

The defective relief analysis procedure of memory involves searching line address or row address in which the defective cell exists, in the searched memory area. Whenever the presence of defective cell is detected in a line address or row address, the address of the defective cell on detected line address or row address is specified and stored. An Independent claim is also included for memory test device.