发明名称 Logic gate
摘要 A ratio logic gate has a current mirror (20) controlled by the pull-down transistors (10-13) and supplying a half size pull-down transistor (23). When one or more of the input pull-down transistors (10-13) is on, the mirror current overcomes the output pull-down transistor (23) to provide a high potential output. Process tolerances between p and n type devices is thus avoided. <IMAGE>
申请公布号 EP1079526(A1) 申请公布日期 2001.02.28
申请号 EP20000303979 申请日期 2000.05.11
申请人 STMICROELECTRONICS, LTD. 发明人 BARNES, WILLIAM BRYAN
分类号 H03K19/017;H03K19/0948 主分类号 H03K19/017
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