Diamond pn junction diode and method for the fabrication thereof.

摘要

A diamond pn junction diode (20) includes a p-type diamond thin-film layer (21) formed on a substrate (11) and an n-type diamond thin-film layer (22) formed by forming a high-quality undoped diamond thin-film layer (22i) on the p-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer, or alternatively includes an n-type diamond thin-film layer (22) formed on a substrate (11) and a p-type diamond thin-film layer (21) formed by forming a high-quality undoped diamond thin-film layer (22i) on the n-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer. A method of fabricating a diamond pn junction diode (20) includes the steps of forming a p-type diamond thin-film layer (21) on a substrate (11), forming a high-quality undoped diamond thin-film layer (22i) on the p-type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer an n-type diamond thin-film layer (22) by ion implantation of an impurity, or alternatively includes the steps of forming an n-type diamond thin-film layer (22) on a substrate (11), forming a high-quality undoped diamond thin-film layer (22i) on the n-type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer a p-type diamond thin-film layer (21) by ion implantation of an impurity.