RESISTIVE MEMORY DEVICE INCLUDING COLUMN DECODER AND OPERATING METHOD THEREOF

摘要

The purpose of the present invention is to provide a resistive memory device capable of performing bidirectional operating and to provide proper biasing for bit lines and an operating method thereof. Disclosed are a resistive memory device including a column decoder and an operating method thereof. The resistive memory device according to a technical idea of the present invention comprises: a memory cell array including memory cells connected to a plurality of signal lines; and the column decoder including a first switch unit which includes a pair of switches arranged by corresponding to each signal line, and a second switch unit which includes a pair of switches arranged by corresponding to one or more pairs of the switches of the first switch unit. The first switch unit includes a first pair of switches connected to a first signal line. The first pair of the switches include a first and a second switch realized as the same type. The second switch unit includes a second pair of switches including a third switch and a fourth switch connected to the first pair of the switches. A selected voltage is provided to the first signal line via the first switch. A prohibited voltage is provided to the first signal line via the first switch or the second switch selectively.