| 发明名称 |
Electronic device having perovskite-type oxide film, production thereof, and ferroelectric capacitor |
| 摘要 |
A method of manufacturing an electronic device including an oxide film of perovskite-type, said method comprising the steps of forming on a base substrate a first conductive oxide film of perovskite type in an atmosphere of reduced pressure at a first temperature, and performing heat treatment on the first conductive oxide film in an oxidizing atmosphere containing oxygen at a second temperature which is higher than the first temperature.
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| 申请公布号 |
US6194228(B1) |
申请公布日期 |
2001.02.27 |
| 申请号 |
US19980175977 |
申请日期 |
1998.10.21 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
FUJIKI MITSUSHI;CROSS JEFFREY S.;TSUKADA MINEHARU |
| 分类号 |
H01L21/283;H01L21/02;H01L21/314;H01L21/316;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/10;H01L27/105;H01L27/108;H01L29/788;H01L29/792;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/283 |
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