发明名称 Input circuit protection
摘要 The input circuit of the present invention includes an NMOSFET. One terminal of the NMOSFET is connected to an input terminal and the gate of the NMOSFET is connected to a power supply terminal via a clamping circuit. A signal, received at the one terminal of the NMOSFET with an amplitude equal to or larger than that of a power supply voltage, is output through the other terminal of the NMOSFET with an amplitude equal to that of the power supply voltage. The input circuit further includes: a gate controller, which is connected to the other terminal of the NMOSFET; and a PMOSFET. One terminal of the PMOSFET is directly connected to the other terminal of the NMOSFET and the gate of the PMOSFET is also connected to the other terminal of the NMOSFET via the gate controller. If the voltage at the other terminal of the NMOSFET is at a high level, the gate controller turns the PMOSFET ON. Alternatively, if the voltage at the other terminal of the NMOSFET is at a low level, the gate controller turns the PMOSFET OFF. In this manner, the gate controller controls the PMOSFET such that the input signal is transmitted to the other terminal of the NMOSFET. The input circuit can receive a signal with a voltage higher than the power supply voltage and yet does not increase the propagation delay of the input signal even if the power supply voltage is reduced.
申请公布号 US6194943(B1) 申请公布日期 2001.02.27
申请号 US19990256894 申请日期 1999.02.24
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YOSHIZAKI SHOICHI;SATOMI KATSUJI
分类号 H03K19/0175;H03K19/003;(IPC1-7):H03K5/08;H03K5/00 主分类号 H03K19/0175
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