| 摘要 |
<p>PROBLEM TO BE SOLVED: To precisely form patterns on a membrane without being affected by a loading effect by dividing patterns of different line widths to be transferred to a photosensitized substrate in a small area of a membrane into patterns of the same line width and allocating them to a plurality of transfer masks. SOLUTION: A set of transfer masks consists of two sheets of overlap transfer masks for electron-beam exposure, and each transfer mask is provided with a membrane on which patterns to be transferred to a photosensitized substrate are formed. Each of a plurality of open patterns (2, 3, 4, 5, 6, 7, 8) having different line widths and enabling to be formed in a small area 1 on a transfer mask is divided into patterns of the same line width to allocate them to respective small areas (9, 10) of two sheets of transfer masks. As a result, influences by a micro-loading effect or a loading effect can be reduced, and open patterns of the transfer mask can be formed highly precisely on the membranes.</p> |
