| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a multiplexed memory and a pressure sensor which are reduced in area and power consumption and high in resistance to noise. SOLUTION: Memory cells 100-113... are arranged in a matrix state, the same data is written in allotted plural memory cells. Data transmission lines D, DN from a write-driver 10 are branched to D0-D1N and connected to plural memory cells so that the same data, for example, complementary data of a positive polarity and a negative polarity, can be written in plural memory cells by one write-driver 10, these branched lines of the data transmission lines share data transmission lines for reading out the same data from plural memory cells, and connected to an input side of a sense amplifier 9 through read/write switching circuits 7, 8 wired-OR.</p> |
