发明名称 |
NON-VOLATILE MEMORY HAVING BURST MODE READING FUNCTION AND PAGE MODE READING FUNCTION DURING INTERRUPTION PERIOD OF ELECTRIC CHANGE OPERATION |
摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a memory having a burst mode reading function and a page mode reading function while erasing or programming one sector in a semiconductor memory having two or more memory sectors S1-S9. SOLUTION: This semiconductor memory is provided with first control circuit means 4, 6 for controlling the electrical change operation of contents of a memory. The first control circuit means 4 (6) can execute selectively the operation for changing electrically one content of a memory sector and can interrupt the execution so as to be possible to reading-access the other memory sectors. The memory is characterized by providing second control circuit means 8, 6 which can permit burst mode reading or page mode reading operation for reading contents of the other memory sectors.</p> |
申请公布号 |
JP2001057087(A) |
申请公布日期 |
2001.02.27 |
申请号 |
JP20000227222 |
申请日期 |
2000.07.27 |
申请人 |
ST MICROELECTRON SRL |
发明人 |
BARTOLI SIMONE;BEDARIDA LORENZO;SALI MAURO;RUSSO ANTONIO |
分类号 |
G11C16/02;(IPC1-7):G11C16/02 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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