| 摘要 |
PROBLEM TO BE SOLVED: To reduce an influence of a local narrow channel effect in a vertical charge transfer path. SOLUTION: This solid state image sensor comprises a semiconductor substrate 1 that demarcates a two-dimensional surface, a photoelectric conversion element 3 including a first conduction semiconductor region arranged on the surface, and a group of paired photoelectric conversion element columns constituted of isolation regions 15 (15a, 15b) and vertical charge transfer paths 5 (5a1 to 5a4). The isolation regions 15 are formed on the substrate around the conversion elements disposed along the columns P1 and P2 is odd-numbered or ever-numbered position, include a plurality of first type second semiconductor layer constituted between the columns P1 and P2, and disposed on the staggered manner along the columns. The vertical charge transfer paths 15 are formed between either one of the columns P1 and P2 and the faced isolation region on the staggered manner along the columns. Further, the vertical charge transfer paths have wider portions W2 between the adjoining elements 3a and 3b on the column, compared with the width W2 between the elements 3a and 3b on the isolation region 15.
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