发明名称 LEVEL SHIFT CIRCUIT
摘要 PROBLEM TO BE SOLVED: To drive this level shift circuit with single voltage by providing a 2nd P type MOS transistor whose drain is connected to the drain of a 2nd N type MOS transistor, etc., and outputting a signal from the drain of a 1st P type MOS transistor to the next stage circuit. SOLUTION: The source of a P type MOS transistor 11 is connected to a power supply line VDD (13 V) on a high potential side, the source of an N type MOS transistor 12 is connected to a power supply line GND (0 V) on a low potential side, and the drains of the transistors 11 and 12 are connected to each other. Also, the source of an N type MOS transistor 13 is connected to a power supply line VDD(13 V) on a high potential side, the source of a P type MOS transistor 14 is connected to a power supply line GND (0 V) on a low potential side, and the drains of the transistors 13 and 14 are connected to each other. Then, this level shift circuit can be driven by single voltage because a signal is outputted from the drain of the transistor 11 to the next stage circuit.
申请公布号 JP2001057518(A) 申请公布日期 2001.02.27
申请号 JP19990231971 申请日期 1999.08.18
申请人 FUJITSU LTD 发明人 MORITA KEIZO
分类号 G09G3/36;G02F1/133;G09G3/20;H03K19/0185;(IPC1-7):H03K19/018 主分类号 G09G3/36
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