发明名称 |
Method for manufacturing thin-film transistors |
摘要 |
A method of manufacturing a semiconductor device includes process of introducing a material for promoting crystallization of an amorphous semiconductor film, crystallizing the amorphous semiconductor film to form a crystalline semiconductor film, introducing phosphorus to form a source region, a drain region, a pair of light doped regions and a channel region being defined between the pair of the light doped region, heating the crystalline semiconductor film so that the material is diffused from the channel region to each of the source and drain regions through each of the pair of light doped region.
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申请公布号 |
US6194255(B1) |
申请公布日期 |
2001.02.27 |
申请号 |
US19970839941 |
申请日期 |
1997.04.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATRY CO. LTD |
发明人 |
HIROKI MASAMITSU;TAKEMURA YASUHIKO;YAMAMOTO MUTSUO;YAMAGUCHI NAOAKI;TERAMOTO SATOSHI |
分类号 |
H01L21/20;H01L21/265;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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