发明名称 Method for manufacturing thin-film transistors
摘要 A method of manufacturing a semiconductor device includes process of introducing a material for promoting crystallization of an amorphous semiconductor film, crystallizing the amorphous semiconductor film to form a crystalline semiconductor film, introducing phosphorus to form a source region, a drain region, a pair of light doped regions and a channel region being defined between the pair of the light doped region, heating the crystalline semiconductor film so that the material is diffused from the channel region to each of the source and drain regions through each of the pair of light doped region.
申请公布号 US6194255(B1) 申请公布日期 2001.02.27
申请号 US19970839941 申请日期 1997.04.18
申请人 SEMICONDUCTOR ENERGY LABORATRY CO. LTD 发明人 HIROKI MASAMITSU;TAKEMURA YASUHIKO;YAMAMOTO MUTSUO;YAMAGUCHI NAOAKI;TERAMOTO SATOSHI
分类号 H01L21/20;H01L21/265;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):H01L21/84 主分类号 H01L21/20
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