发明名称 Semiconductor device having semiconductor memory circuit to be tested, method of testing semiconductor memory circuit and read circuit for semiconductor memory circuit
摘要 Disclosed herein is a semiconductor device having a semiconductor memory circuit whose operation is tested in combination with an external test means to specify defective portions produced in a memory section of the semiconductor memory circuit and shorten the time necessary for its test. The present semiconductor device comprises a test pattern generator for generating a test pattern indicative of the type of test and an expected value estimated to be obtained by the test pattern in response to a command issued from the test means, the semiconductor memory circuit, which has a plurality of memory cells disposed in the form of a matrix with rows and columns and respectively store data therein and is activated based on the test pattern so as to output data in the respective memory cells every columns, a decision unit for comparing each output data with the expected value and outputting the result of comparison therefrom and a translation unit for converting the result of comparison into address data and outputting it to the external test means.
申请公布号 US6195771(B1) 申请公布日期 2001.02.27
申请号 US19970807462 申请日期 1997.02.27
申请人 OKI ELECTRIC INDUSTRY CO., LTD 发明人 TANABE TETSUYA;TANOI SATORU;TOKUNAGA YASUHIRO
分类号 G01R31/28;G06F12/16;G11C11/401;G11C11/413;G11C29/00;G11C29/14;G11C29/44;G11C29/56;(IPC1-7):G11C29/00 主分类号 G01R31/28
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