| 摘要 |
A bipolar transistor includes a collector region, an intrinsic base region within the collector region, an extrinsic base region within the collector region, and a base link-up region within the collector region between the intrinsic base region and the extrinsic base region. An emitter region is positioned within the intrinsic base region. A base electrode overlays and is in electrical communication with a portion of the extrinsic base region and the base link-up region, and a doped inter-polysilicon dielectric layer overlays a portion of the base electrode. A capping layer is positioned above the inter-polysilicon dielectric layer; and an emitter electrode overlays the inter-polysilicon dielectric layer and the emitter region. The doped inter-polysilicon dielectric layer is the dopant source for forming the extrinsic base region and the base link-up region.
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