| 摘要 |
PROBLEM TO BE SOLVED: To form a silicon film excellent in crystallinity by irradiating a silicon film with luminous energy having output varying abruptly and melting the silicon film, and then controlling solidification artificially by providing a spatial difference in the cooling rate. SOLUTION: An aluminum nitride film is formed by reactive sputtering using a glass substrate 101. The aluminum nitride film is then etched selectively to form aluminum nitride regions 102, 103. Subsequently, a silicon oxide film 104 is formed by plasma CVD and a silicon oxide film 107 is converted into a polysilicon film by low pressure CVD. It is then patterned and etched to form gate electrodes 108, 109 for N type and P type TFTs. Thereafter, a silicon oxide film is formed as an interlayer insulator 112 on the entire surface. Finally, the interlayer insulator 112 is etched to make a contact hole in the source-drain of the TFT and interconnections 113-115 of chromium or titanium nitride are formed. |
