| 摘要 |
A structure for high-voltage semiconductor devices that have trench structure, substantially facilitating the integration of the high-voltage devices and the low-voltage devices, is disclosed. The present invention includes a semiconductor substrate and at least two dielectric regions in the substrate, one of the dielectric regions being spaced from the other of the dielectric regions by a channel region. The structure also includes at least two drift regions, each of the drift regions being adjacent to and in contact with each of the dielectric regions respectively. A gate region is formed on the substrate, wherein the gate region covers the channel region and portions of the dielectric regions. A source region adjacent to one of the dielectric region is formed, wherein the source region is spaced from the channel region by such adjacent dielectric region. A drain region adjacent to the other one of the dielectric regions is further formed, wherein the drain region is spaced from the channel region by such adjacent dielectric region.
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