CHEMICAL AMPLIFICATION TYPE POSITIVE TYPE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD USING SAME

摘要

PROBLEM TO BE SOLVED: To obtain a chemical amplification type positive type resist composition capable of forming a resist pattern with a high ratio of a residual film in the unexposed part by using an organic solvent comprising a mixture of a specified principal solvent and an auxiliary solvent capable of remaining in a resist film formed on a substrate after pre-exposure heating in a specified temperature range and post-exposure heating in a specified temperature range. SOLUTION: A compound which generates an acid when irradiated by radiation and a copolymer containing units derived from hydroxy(α-methyl)styrene and units derived from a (meth)acrylic ester having an acid dissociable dissolution inhibiting group are dissolved in an organic solvent comprising a mixture of at least one principal solvent and an auxiliary solvent capable of remaining in a resist film formed on a substrate after pre-exposure heating in the range of 130-160 deg.C and subsequent post-exposure heating in the range of 100-140 deg.C in a lithography process. The principal solvent is selected from 2-heptanone, a propylene glycol monoalkyl ether, etc.