| 发明名称 |
Method of fabricating in-situ doped rough polycrystalline silicon using a single wafer reactor |
| 摘要 |
A method of fabricating in-situ doped rough polycrystalline silicon in a single process in a single wafer reactor is disclosed. The method includes substantially simultaneously flowing SiH4, PH3, and H2 in the single wafer reactor under predetermined temperature and pressure conditions and gas flow rates that result in nucleation and growth of a rugged polycrystalline silicon.
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| 申请公布号 |
US6194292(B1) |
申请公布日期 |
2001.02.27 |
| 申请号 |
US19990378688 |
申请日期 |
1999.08.20 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TSU ROBERT YUNG-HSI;AOYAMA SHINTARO;ANDO TOSHIO |
| 分类号 |
H01L21/31;C23C16/24;H01L21/02;(IPC1-7):H01L21/20;H01L21/36 |
主分类号 |
H01L21/31 |
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