| 摘要 |
A radio frequency (RF) power amplifier circuit comprising an RF gain stage formed on an integrated circuit (IC) chip comprising at least one field effect transistor configured for amplifying an RF signal to provide an amplified RF signal to an antenna at a given RF power level; a compensation circuit formed on the IC chip for generating a first voltage VS+ and a second voltage VS- at respective first and second output terminals, the voltage difference therebetween corresponding to a level of temperature or process fluctuation from a given level associated with the RF gain stage; and a control circuit comprising an operational amplifier coupled to the output terminals of the compensation circuit for receiving the first and second voltages VS+, VS- and outputting a control signal to the gate of the at least one FET of the RF gain stage to compensate the RF gain stage for the fluctuation, whereby a substantially constant power output to the antenna is maintained.
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