| 摘要 |
A projection exposure apparatus detects positions at the measurement points (P1-P5) in the Z-direction on the shot area of the wafer W, and obtains the distribution of the irregularity of the shot area based on the detected result and the pre-known process structure data. For example, when the pattern having the narrowest line width is exposed in the pattern area (40B), the pattern area (40B) is made as a focusing reference plane and the difference in level (ZA-ZB) of another area of which reference is pattern area (40B) is added to the level of the best image plane (42) as an offset value. The pattern area (40B) is focused to the best image plane (42) by fitting image plane (42A) to the exposure surface.
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