| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the line width of a circuit pattern transcribed on a wafer from being affected by the unevenness of the reflectance of a reflection mask, by making unfixed and different from each other the extendedly existent periodic lengths of a multilayer film along its lamination direction. SOLUTION: On a substrate 1, a multilayer film 2 is formed to form thereon an absorbent layer 3 having a predetermined circuit-pattern shape, and the periodic lengths of the multilayer film 2 are made unfixed to vary them in the course of its lamination. That is, by dividing the multilayer film 2 into first and second blocks having two respective periodic structures, the first block is laminated at a periodic length d1 and the residual second block is laminated at a periodic length d2 changed in the course of the lamination of the film 2. Also, the multilayer film 2 is so laminated that its initial layer present on the side of the substrate 1 is formed at the periodic length d1, and the periodic length of its layer becomes dN on its surface side. In this way, by changing the periodic lengths of the multilayer film 2 in the course of its lamination, the half-value width of its reflectance curve versus the wavelength of a projection beam can be expanded. As a result, the yield of the manufacture of a reflection mask is improved to make reducible its manufacturing cost.</p> |
