| 摘要 |
PROBLEM TO BE SOLVED: To form in parallel a plurality of contacts suitable for a simultaneous test of a plurality of semiconductor products at fine intervals, by a method wherein a high frequency wavelength band satisfying a test demand of a next generation semiconductor technology is provided, and also a contact structure is formed by use of a modern fine processing technology. SOLUTION: When a testing semiconductor wafer 300 is moved upward, a contact 230 comes into contact with a contact target 320 on the testing wafer 300. A pitch between the contact targets 320 is 50μm or less, and as the contact 230 is manufactured in the same semiconductor manufacture step as in the semiconductor wafer 300, a plurality of the contacts 230 can be aligned at small pitches. A probe card mounting the contact 230 can increase readily the frequency band to 2 GHz or more, and the mounting number can be increased to 2000 pieces, etc., and 32 pieces or more of memory devices can be simultaneously tested in parallel. |
