| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where the same fine processing technique is used for processes through which memories and logics are formed. SOLUTION: Contact holes used in a memory and a logic are set uniform in diameter when a contact hole 22 is bored, by which processing can be carried out through one lithography process. Through an insulating film forming process which is carried out after a contact hole 22 is bored, only a contact hole bored in a memory A is lessened in diameter, and a gate electrode 16 and the contact hole 22 are ensured of insulation properties by an insulating film side wall which is formed on the side wall-of the contact hole 22.
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