| 摘要 |
PROBLEM TO BE SOLVED: To manufacture easily at high precision with less processes, while suppressing a leak current. SOLUTION: On an n-type GaAs substrate 10, an n-type AlGaAs clad layer 12, a GaAs/AlGaAs multiple quantum well active layer 14, a p-type AlGaAs clad layer 16, and a p-type GaAs cap layer 18 are sequentially laminated. With the p-type AlGaAs clad layer 16 etched and removed halfway, an n-type AlGaAs current block layer 20 is formed on both sides of a stripe-like current injection region as well as near the end surface of a resonator. A p-type GaAs contact layer 22 is formed over the entire surface of the p-type GaAs cap layer 18 and an n-type current block layer 20, and a p-side electrode 24 is formed on its surface while forming an n-side electrode 26 on the rear surface side of the n-type GaAs substrate 10. The GaAs/AlGaAs multiple quantum well active layer 14 below the n-type current block layer 20 is an AlGaAs mixed crystal 28 wherein a periodic structure is out of order.
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