发明名称 |
Semiconductor light emitting device and method of manufacturing the same |
摘要 |
A semiconductor layered portion is formed of a gallium-nitride semiconductor overlying a substrate and having an n-type layer and a p-type layer to form a light emitting layer having a pn junction or a doublehetero junction. A gradient layer is provided at an interfacial portion between an lower layer and an upper layer of the semiconductor layered portion, wherein the gradient layer has a composition varied from a composition from said lower layer to a composition of the upper layer. With this structure, a semiconductor light emitting device which is excellent in light emitting efficiency is provided by reducing crystal lattice mismatch between semiconductor layers formed different in lattice constant on a substrate.
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申请公布号 |
US6194241(B1) |
申请公布日期 |
2001.02.27 |
申请号 |
US19980059388 |
申请日期 |
1998.04.14 |
申请人 |
ROHM CO., LTD. |
发明人 |
TSUTSUI TSUYOSHI;NAKATA SHUNJI;SHAKUDA YUKIO;SONOBE MASAYUKI;ITOH NORIKAZU |
分类号 |
H01L21/20;H01L21/205;H01L33/12;H01L33/32;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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