发明名称 |
High dielectric constant gate dielectric with an overlying tantalum gate conductor formed on a sidewall surface of a sacrificial structure |
摘要 |
A transistor is provided having a gate conductor produced with ultra fine geometries. The gate conductor is metallic and is sized using deposition rather than photolithography. The deposition process can be closely controlled to achieve gate lengths less than a few tenths of a micron. The metallic gate conductor serves to source metal atoms during anneal of lightly doped drain regions. The metal atoms migrate to the gate dielectric directly beneath the gate conductor to convert the gate dielectric to a high K dielectric. The high K dielectric is substantially resistant to breakdown yet enjoys the benefits of high speed operation and low threshold turn-on.
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申请公布号 |
US6194768(B1) |
申请公布日期 |
2001.02.27 |
申请号 |
US19980177867 |
申请日期 |
1998.10.23 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDNER MARK I.;HAUSE FREDERICK N.;MAY CHARLES E. |
分类号 |
H01L21/28;H01L21/336;H01L21/8234;H01L29/49;H01L29/51;(IPC1-7):H01L31/119 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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