Voltage controlled generator for semiconductor devices

摘要

The voltage control generator for a semiconductor device is disclosed, in which the substrate bias voltage through the oscillation period of the step-up voltage generator circuit are quickly adjusted with respect to the level variation of a corresponding voltage. The circuit according to the present invention includes a control level generator generating at least one control signal for detecting a substrate bias voltage level from a substrate of a semiconductor device and adjusting the width of an oscillation period to a set level in accordance with the detected signal, a voltage control oscillator generating a signal in which the width of an oscillation period is varied to the set level in response to an output signal from the control level generator, and a charge pump supplying a stable bias voltage to the substrate of the semiconductor device by increasing or decreasing a pumping speed in response to an output signal from the voltage control oscillator. Since the voltage control oscillator is used as an oscillator for determining the pumping period of the charge pump, it is possible to effectively control the oscillation period in accordance with the detected voltage level variation for thereby decreasing the power consumption.